Molybdenum (Mo) is commonly used as back contacts for Cu(In,Ga)Se2(CIGS) thin film solar cells because it has the good electrical
properties of an ohmic contactand is an inert, mechanically durable
substrate duringthe absorber film growth. In general, Mo is deposited
bydc sputtering onto soda-lime glass substrates. The elec-trical and the
mechanical properties of sputtered refrac-tory metal films are known to
vary with the working gaspressure .
CIGS thin film growth occurs at
tempera-tures > 500 and at these temperatures, the thermallyinduced
extrinsic stresses in the glass-Mo structure maycause bending or
mechanical distortion of substrate .During the formation of CIGS films,
Na ions diffuse fromthe soda-lime glass substrate through the Mo back
con-tact into the absorber layer. The diffusion of Na into theabsorber
film depends on the deposition conditions of theMo back contact .
Molybdenum Electrodes |
Molybdenum films were deposited on soda-lime glass substrates by using
DC magnetron sputtering. Their structural and morphological properties
and their electrical resistivities were analyzed with respect to the
working gas (Ar) pressure. The electrical resistivity of the Mo films
monotonically increased as the gas pressure was increased. The films
showed a (110) preferred orientation,regardless of the working gas
pressure. The surface morphology of the films changed from an elon-gated
grain structure at lower working pressures to a porous nodular shape at
higher pressures.The surface roughness of the films increased with the
working gas pressure. Secondary ion mass spectrometry data showed that
Na diffusion from the soda lime glass substrate through the Moback
contact was high, for the film sputtered at 5 mTorr. Cu(InGa)Se2 solar
cells fabricated on Mofilms sputtered at 5 mTorr showed the best
conversion efficiencies.
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